Wafer-scale fabrication of memristive passive crossbar circuits for brain-scale neuromorphic computing.

ABSTRACT: Memristive passive crossbar circuits hold great promise for neuromorphic computing, offering high integration density combined with massively parallel operation. However, scaling up the integration complexity of such circuits remains challenging due to low device yield, stemming from the intrinsic properties of filamentary switching and limitations in current crossbar fabrication technologies. Here, we report a scalable passive crossbar device technology achieved through a co-design approach for memristors and crossbar structures. The proposed hardware platform is fabricated using CMOS-compatible processes without complex and high-temperature steps, enabling high device yield along with reliable and multibit operation. Importantly, the fabrication process is successfully scaled to a 4-inch

SUBMITTER: Choi S 

PROVIDER: S-EPMC12488888 | biostudies-literature | 2025 Oct

REPOSITORIES: biostudies-literature