One-Step Laser-Induced Oxidation and Doping for Tailored p-Type Conversion of Al-Doped TiO₂.

ABSTRACT: The lack of p-type conductivity in metal oxide semiconductors presents the major limitation for their integration into complementary metal-oxide-semiconductor (CMOS) technology, which requires both n-type and p-type semiconductors for balanced and efficient operation. Titanium dioxide (TiO₂) is known for its wide-gap n-type semiconductor characteristics, but it is challenging to convert it into a p-type semiconductor. This study focuses on the semiconducting type conversion of TiO₂ via laser-assisted oxidation and doping integration, enabling simultaneous Ti oxidation to form TiO₂ and type-conversion-friendly Al doping in a single step. When the laser power exceeds a specific threshold, Al cations from the underlying Al₂O₃ layer diffuse into the TiO₂ lattic

SUBMITTER: Yang G 

PROVIDER: S-EPMC12490181 | biostudies-literature | 2025 Oct

REPOSITORIES: biostudies-literature