A stable monoclinic variant and resultant robust ferroelectricity in single-crystalline hafnia-based films.

ABSTRACT: The ferroelectricity in nanoscale HfO₂-based films enables their applications more promising than that of the perovskite oxides, taking into account the easy compatibility with the modern silicon-based semiconductor technology. However, the well-known polar orthorhombic phase is thermodynamically metastable, making the applications of HfO₂-based ferroelectrics challenging in terms of uncontrollability and consequently instability of the physical performance in electronic devices. Here we report the robust ferroelectricity in stable monoclinic Hf_0.5Zr_0.5O₂ single-crystalline films, which was known as non-polar before. The as-prepared films display high endurance performance of wake-up free and non-fatigue behavior up to 10¹²

SUBMITTER: Geng WR 

PROVIDER: S-EPMC12494953 | biostudies-literature | 2025 Oct

REPOSITORIES: biostudies-literature