Unraveling ionic switching dynamics in high-k dielectric double-gate transistors via low-frequency noise spectroscopy.

ABSTRACT: High-k dielectric materials such as HfO₂ have garnered significant attention for their potential applications in advanced electronic devices due to their superior dielectric properties. Particularly, oxygen vacancies within these materials can be strategically utilized to implement memory functionalities. However, the precise analysis of the electrical, chemical, and electrochemical characteristics related to oxygen vacancies remains challenging. In this study, we fabricated a double-gate thin-film transistor (TFT) structure employing HfO₂ as the gate dielectric for both top and bottom gates, with the oxygen vacancy concentration intentionally modulated by introducing a TiO₂ interlayer at the bottom gate stack. This TiO₂ layer effectively increas

SUBMITTER: Jeong S 

PROVIDER: S-EPMC12495002 | biostudies-literature | 2025 Oct

REPOSITORIES: biostudies-literature