Impact of the Atomic Structure at the BiVO<sub>4</sub>/TiO<sub>2</sub> Interface on the Electronic Properties and Performance of BiVO<sub>4</sub>/TiO<sub>2</sub> Photoanodes.
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ABSTRACT: In photoelectrochemical cells, semiconductor electrodes are usually interfaced with protection layers to extend their stability. Ideally, the protection layer should not decrease photocurrent generation. Hence, the conduction band minimum (CBM) and valence band maximum (VBM) of the protection layer should appropriately align with those of the underlying semiconductor electrode to facilitate the desired interfacial charge transfer with minimal interfacial recombination. However, predicting interfacial band alignment can be challenging, as it may vary depending on the detailed interfacial atomic structure. Investigating the effect of the atomic structure at the semiconductor/protection layer junction on the band alignment is also challenging as it requires samples with varied interfaces with
SUBMITTER: Wi DH
PROVIDER: S-EPMC12503355 | biostudies-literature | 2025 Aug
REPOSITORIES: biostudies-literature
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