Subsurface Interface Structure Controlling Local Electronic Properties of Epitaxial Graphene on SiC(0001).

ABSTRACT: Recently realized high-mobility semiconducting epitaxial graphene on silicon carbide (SiC) [Zhao, J. Nature 2024, 625 (7993), 60-65, 10.1038/s41586-023-06811-0] provided an important step toward integration of the graphene-based system into active components in postsilicon micro- and nanoelectronics. However, the exact atomic-scale structure and complex bonding configurations of the first epitaxial graphene carbon layer (C_buffer) remain an open problem. Our recent report [Kolmer, M. Communications Physics 2024, 7 (1), 16, 10.1038/s42005-023-01515-3] has shed new light on understanding this interface, where the external transverse electric field-dependent dynamic switching behavior of the C_buffer-SiC bonds was observed. Here, using scanning tunneling micr

SUBMITTER: Thupakula U 

PROVIDER: S-EPMC12516722 | biostudies-literature | 2025 Oct

REPOSITORIES: biostudies-literature