DFT mechanistic insights into the atomic layer deposition of β-Ga₂O₃.

ABSTRACT: Ga₂O₃ is a wide bandgap semiconductor material exhibiting vast application potential in power electronics, radio frequency electronics, deep ultraviolet optoelectronic devices, and other fields. The fabrication of β-Ga₂O₃ thin films presents a formidable yet indispensable task although a multitude of epitaxial growth techniques has been utilized, with chemical vapor deposition (CVD) and atomic layer deposition (ALD) being the most prevalent. However, the growth mechanism of β-Ga₂O₃, especially through ALD using trimethyl gallium (TMG) and O₂, is still poorly understood. Thus, in this study, we employ density functional theory (DFT) to investigate the surface reaction mechanisms and detailed pathways of β-Ga_2<

SUBMITTER: Yang J 

PROVIDER: S-EPMC12517327 | biostudies-literature | 2025 Oct

REPOSITORIES: biostudies-literature