Enhanced programming efficiency in vertical NAND flash using self-boosting hot carrier injection.

ABSTRACT: The Fowler-Nordheim (FN) tunneling scheme is constrained by its high operating voltage requirement and poor energy efficiency, posing significant technical challenges. In response, Hot Carrier Injection (HCI) - based programming methods have been explored as promising alternatives for achieving efficient programming at reduced voltages. This study investigates three fundamental issues inherent in the conventional Self-boosting channel-based HCI approach : program disturbance occurring in cells adjacent to the drain select line (DSL), non-uniform charge injection into the Charge Trap Layer (CTL), and programming efficiency (PGM efficiency) variations depending on cell location. To address these challenges, we propose a novel Bi-lateral HCI programming (HCI-BiPGM) scheme that induces hot car

SUBMITTER: Kim M 

PROVIDER: S-EPMC12521588 | biostudies-literature | 2025 Oct

REPOSITORIES: biostudies-literature