Transparent UVA photodetectors based on oxide semiconductors for real-time wearable skin protection monitoring.

ABSTRACT: Ultraviolet A (UVA) radiation penetrates deeply into the skin and can potentially damage skin health. Therefore, continuous monitoring of UVA exposure is essential to prevent long-term effects on skin health. For this purpose, UV light sensors should provide selective UVA detection while maintaining high optical transparency in the visible range, enabling integration into wearable and transparent electronic devices. In this study, we fabricated a photodetector optimized for UVA detection based on a fully transparent p-n junction photodiode architecture. A multijunction structure was designed using SnO₂/ZnO as n-type oxide semiconductors and CoO_x combined with defect-engineered HfO_x as p-type semiconductors, with ITO serving as the cathode. The

SUBMITTER: Kim YB 

PROVIDER: S-EPMC12526771 | biostudies-literature | 2025 Oct

REPOSITORIES: biostudies-literature