Laser Processing of Ti Contacts for Ohmic Behavior on P‑Type 4H-SiC.

ABSTRACT: This work explores a key challenge in power device fabrication: the formation of ohmic contacts on p-type 4H-silicon carbide (SiC). We demonstrate a selective, low thermal budget approach using single titanium (Ti) metallization combined with pulsed laser annealing (PLA), as an alternative to both metallic multilayer stacks and conventional high-temperature annealing. By applying PLA with fluences above 3.6 J/cm², Ti contacts exhibit linear current-voltage (I-V) behavior, indicating effective ohmic contact formation, with over 50% improvement in conduction observed at 3.8 J/cm². Cross-sectional transmission electron microscopy (TEM) and elemental mapping reveal that higher fluences promote deeper SiC consumption, and the formation of a continuous, epitax

SUBMITTER: Vabres R 

PROVIDER: S-EPMC12530173 | biostudies-literature | 2025 Oct

REPOSITORIES: biostudies-literature