All HfO_<i>x</i>-Resistive Switches with the Conducting Oxygen Vacancy Exchange Layer and Self-Limited Oxide Layer.

ABSTRACT: Resistive random-access memory based on hafnia is a potential candidate for next-generation memories. However, there are some key challenges to overcome, including the stochastic nature of the filament formation during electroforming and SET operation, which results in large cycle-to-cycle and device-to-device variability. Here, we propose a device setup with an artificial virtual electrode layer of conducting oxygen-deficient HfO_x and a well-defined self-limited oxidized switching layer to reduce the stochasticity of filament growth. We have realized this concept in TiN/HfO_x/HfO₂/Pt device stacks by adjusting the oxygen content in the artificial virtual electrode during growth in a molecular beam epitaxy system and subsequent self-limited sur

SUBMITTER: Schreyer P 

PROVIDER: S-EPMC12532084 | biostudies-literature | 2025 Oct

REPOSITORIES: biostudies-literature