Femtosecond Laser-Written Nanoablations Containing Bright Antibunched Emitters on Gallium Nitride.

ABSTRACT: Femtosecond laser-writing offers distinct capabilities for fabrication, including three-dimensional, multimaterial, and sub-diffraction-limited patterning. In particular, demonstrations of laser-written quantum emitters and photonic devices with superior optical properties have attracted attention. Recently, gallium nitride (GaN) has been reported to host quantum emitters with narrow and bright zero-phonon photoluminescence from ultraviolet to telecom ranges. However, emitters formed during epitaxy are randomly positioned, and until now, it has not been possible to fabricate quantum emitters in ordered arrays. In this paper, we employ femtosecond laser writing to create nanoablations with sub-diffraction-limited diameter and use rapid thermal annealing to activate co-located stable emitter

SUBMITTER: Guo Y 

PROVIDER: S-EPMC12532371 | biostudies-literature | 2025 Oct

REPOSITORIES: biostudies-literature