Donnan-Engineered Inner Helmholtz Plane Enabling Ultra-Stable Aqueous Bismuth Electrode.

ABSTRACT: The electrochemical instability of the solid-liquid interface remains a critical bottleneck in rechargeable aqueous metal batteries (RAMBs), where traditional strategies fail to resolve the inherent conflict between electrochemical and parasitic reactions at the inner Helmholtz plane (IHP). Herein, inspiring from the ion-sieving principles of the Donnan effect, classical electrostatics is integrated with interfacial engineering by creating a phosphate anion (PO₄ ^3-)-adsorbed IHP on a bismuth (Bi) electrode. The immobilized PO₄ ^3- establishes a sustained Donnan potential, driving three key functions: i) ion and reaction sieving through charge-selective ion partitioning, enriching Na⁺ while excluding OH⁻ to enable selective (de)alloying over corros

SUBMITTER: Qin T 

PROVIDER: S-EPMC12533370 | biostudies-literature | 2025 Oct

REPOSITORIES: biostudies-literature