Structural analysis of Si-doped amorphous In₂O₃ based on quantum beam measurements and computer simulations.

ABSTRACT: The structural properties and thermal stability of Si-doped amorphous indium oxide (ISO) were investigated via experimental characterization and computational modeling techniques. The total structure factors, S(Q), and reduced pair distribution functions, G(r), were calculated for both annealed and pristine ISO samples, revealing the distinct structural features induced by Si doping and thermal treatment. Although the pristine ISO samples exhibited halo patterns indicative of an amorphous structure, annealing at 600 °C led to pronounced Bragg peaks, suggesting that the sample was crystallized. However, an ISO with a higher Si content (20 at%) retained its amorphous structure even after annealing, highlighting the role of Si-doping in enhancing the thermal stability. Classical molecular dyn

SUBMITTER: Shuseki Y 

PROVIDER: S-EPMC12540856 | biostudies-literature | 2025 Oct

REPOSITORIES: biostudies-literature