Integrated silicon nitride devices via inverse design.

ABSTRACT: Integrated photonic devices made of silicon nitride, which can be integrated with silicon-on-insulator and III-V platforms, are expected to drive the expansion of silicon photonics technology. However, the relatively low refractive index contrast of silicon nitride is often considered a limitation for creating compact and efficient devices. Here, we present three freeform silicon nitride devices-a coarse wavelength-division multiplexer, a five-mode mode division multiplexer, and a polarization beam splitter-while systematically benchmarking both the design capability and the fabrication repeatability and robustness of inverse-designed components. We demonstrate up to a 1200× reduction in footprint while maintaining relatively large minimum feature sizes of up to 160 nm, showing that invers

SUBMITTER: Pita Ruiz JL 

PROVIDER: S-EPMC12540863 | biostudies-literature | 2025 Oct

REPOSITORIES: biostudies-literature