Influence of deposition conditions on ALD based Ru passivation for Cu-Cu hybrid bonding.

ABSTRACT: Cu-Cu hybrid bonding is a key technology for fine-pitch interconnections in advanced semiconductor packaging. However, native Cu oxidation and interface instability hinder reliable low-temperature bonding. While noble metal passivation can mitigate oxidation, conventional sputtering-based methods pose challenges for Cu/SiO₂ hybrid bonding. Atomic layer deposition (ALD) offers a promising alternative for area-selective metal passivation, enabling precise deposition on Cu surfaces without affecting surrounding dielectrics. In this study, we evaluate the bonding characteristics of ruthenium (Ru) passivation layers deposited using plasma-enhanced ALD (PEALD) and compare them with sputtered Ru passivation layers. While PEALD Ru exhibited comparable thin-film properties, bonding perfo

SUBMITTER: Park SW 

PROVIDER: S-EPMC12540864 | biostudies-literature | 2025 Oct

REPOSITORIES: biostudies-literature