Sulfur redox mediator for low-temperature flexible amorphous oxide CMOS electronics.

ABSTRACT: Amorphous p-type oxides are essential for next-generation flexible and scalable complementary metal-oxide semiconductor (CMOS) technologies. Among emerging candidates, tellurium-based oxides (Te-TeO_x) show great promise due to their unique Te-Te conduction networks embedded within the amorphous TeO₂ matrix. However, controlled formation of these conduction channels remains challenging, limiting both hole transport and dopability under low thermal budgets. Here, we report a sulfur-mediated redox strategy that modulates the local bonding environment via TeO₂ dissociation and partial Te⁴⁺ reduction, promoting formation of short-chain Te-Te networks. This enables high-performance p-channel thin-film transistors processed at an ultralow tempera

SUBMITTER: Wang M 

PROVIDER: S-EPMC12551691 | biostudies-literature | 2025 Oct

REPOSITORIES: biostudies-literature