Quantum spin Hall effect in III-V semiconductors at elevated temperatures: Advancing topological electronics.

ABSTRACT: The quantum spin Hall effect (QSHE), a hallmark of topological insulators, enables dissipationless, spin-polarized edge transport and has been predicted in various two-dimensional materials. However, challenges such as limited scalability, low-temperature operation, and the lack of robust electronic transport have hindered practical implementations. Here, we demonstrate the QSHE in an InAs/GaInSb/InAs trilayer quantum well structure operating at elevated temperatures. This platform meets key criteria for device integration, including scalability, reproducibility, and tunability via electric field. When the Fermi level is positioned within the energy gap, we observe quantized resistance values independent of device length and in both local and nonlocal measurement configurations, confirming

SUBMITTER: Meyer M 

PROVIDER: S-EPMC12551694 | biostudies-literature | 2025 Oct

REPOSITORIES: biostudies-literature