III-Nitride MEMS drum resonators on flexible metal substrates.

ABSTRACT: We present a simple and efficient process for fabricating III-Nitride (III-N) mechanical resonators on flexible metal substrates. This method combines Van der Waals epitaxy of III-N epilayers with the deposition of a thick metal stressor atop the III-N layers. During thermal treatment, the 30 μm thick metal stressor deposited on a 300 nm AlGaN/500 nm GaN layer grown on a 3 nm two-dimensional hexagonal-Boron Nitride (2D h-BN) release layer, initiates a one-step Self-Lift-Off and Transfer (SLOT) process. This process effectively transfers the III-N heterostructure from the h-BN/Sapphire growth wafer to the flexible metal stressor substrate. Additional local etching of the metal stressor and deposition of front electrodes allow for releasing self-standing III-N layers with integrated actuatio

SUBMITTER: Kassem A 

PROVIDER: S-EPMC12552455 | biostudies-literature | 2025 Oct

REPOSITORIES: biostudies-literature