Enhanced SWIR photodetection in Te<sub>0.7</sub>Se<sub>0.3</sub> alloy based phototransistors with spectral range of 1300 nm via dual-gate engineering.
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ABSTRACT: Short wavelength infrared (SWIR, 1-2.5 μm) photodetection plays a critical role in various applications, including night vision, remote sensing and optical communication. Conventional SWIR photodetectors, such as InGaAs and HgCdTe-based devices, face several challenges related to high fabrication costs, heterogeneous integration limitations of silicon Read-Out Integrated Circuit and environmental concerns. This study propose a Te0.7Se0.3 alloy thin film-based dual-gate phototransistor with a high-performance and cost-effective alternative for SWIR photodetection with spectral range of 1300 nm. By employing Te-Se alloy thin film as an active channel material, the both SWIR absorption and low off current state of thin film transistor (TFT) were successfully achieved. Fu
SUBMITTER: Baek S
PROVIDER: S-EPMC12552464 | biostudies-literature | 2025 Oct
REPOSITORIES: biostudies-literature
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