Thin-Film Silicon Nanosheet-Based Neuromorphic Assemblies.

ABSTRACT: We demonstrate neuromorphic behavior in silicon nanosheet (NS) assemblies. We utilized Cl- and H-passivated Si-NSs that were synthesized through topotactic deintercalation of the Zintl phase of CaSi₂ with concentrated HCl at -35 °C. We utilize a silicon-based platform in which we fabricated Au source-drain (S-D) electrodes on SiO₂/Si wafers by photolithography. We fabricated encapsulated assemblies of Si-NS between gold S-D electrodes at mesoscopic channel lengths (30-80 μm) using solution processing methods. The Si-NS assemblies exhibit novel neuromorphic characteristics in which spiking voltage inputs lead to decaying spiking current outputs, analogous to plasticity known for neuron-synapse systems. Decaying spiking current outputs follow a power-law decay (∼t^-

SUBMITTER: Biswas R 

PROVIDER: S-EPMC12557194 | biostudies-literature | 2025 Oct

REPOSITORIES: biostudies-literature