Direct Formation of Stable 1T' Molybdenum Telluride (MoTe₂) by Laser Annealing Processes as Robust Contacts for High-Performance Molybdenum Disulfide (MoS₂) Field Effect Transistors.

ABSTRACT: Semimetals, with their low density of states near the Fermi level, effectively suppress metal-induced gap states, enabling near-zero Schottky barrier heights in two-dimensional (2D) field-effect transistors (FETs). However, the low melting point of semimetals (Bi, Sb) limits the applications of 2D FETs at high temperatures. Here, we introduce a robust semimetal contact strategy for high-performance MoS₂ FETs, based on continuous-wave laser annealing of elemental metals (Bi, Mo, Pt, W) and tellurium to form metal tellurides. Specifically, the phase of molybdenum telluride (1T'/2H) can be prepared under different laser parameters. In particular, large-area, high-crystallinity films of stable 1T'-MoTe₂ can be synthesized uniformly, and source/drain electrodes of 1T'-MoTe

SUBMITTER: Kuo YZ 

PROVIDER: S-EPMC12557218 | biostudies-literature | 2025 Oct

REPOSITORIES: biostudies-literature