Scalable InAs/InGaAs DWELL structures for broadband infrared emission spanning the E- to O-band.

ABSTRACT: This study presents the optimization of MOCVD growth conditions for InAs/InGaAs quantum dots-in-a-well (DWELL) structures on 4-inch GaAs substrates incorporating an InGaP seed layer. By precisely tuning the arsenic-to-indium (As/In) ratio, growth temperature, and deposition duration, we achieved accurate control over the size and density of quantum dots (QDs), enabling a broad tuning of infrared emission wavelengths from 1200 to 1450 nm. Using photoluminescence spectroscopy and numerical modeling, we investigated the impact of In content of the InₓGa_1-ₓAs strain-reducing cap layers on the optical properties of the DWELL structures. A linear correlation was observed between In concentration and the emission peak wavelength, highlighting the significant role of the capping layer c

SUBMITTER: Mouloua D 

PROVIDER: S-EPMC12559218 | biostudies-literature | 2025 Oct

REPOSITORIES: biostudies-literature