Vertical GaN-On-GaN Micro-LEDs for Near-Eye Displays.

ABSTRACT: In various micro-light-emitting diode (micro-LED) display products, near-eye applications such as AR (augmented reality) and VR (virtual reality) are gaining popularity, driving consumer demand for higher brightness, resolution, and compact size. To address more advanced demands, GaN-on-GaN homoepitaxial micro-LEDs are notable for their low defect density, excellent thermal management, high efficiency, etc. Additionally, the conductivity of the GaN substrate enables the efficient integration of vertical micro-LEDs, further enhancing performance for near-eye displays. In this work, GaN-on-GaN homoepitaxial platforms to fabricate low-defect-density micro-LEDs are leveraged with superior electrical properties, addressing the limitations of conventional heterogeneous substrates. By replacing t

SUBMITTER: Li Z 

PROVIDER: S-EPMC12561280 | biostudies-literature | 2025 Oct

REPOSITORIES: biostudies-literature