Optimizing Annealing Temperature for Enhanced Electrical Performance and Stability of Solution-Processed In₂O₃ Thin-Film Transistors.

ABSTRACT: This study investigates the influence of post-deposition thermal annealing temperature on the crystal structure, chemical composition, and electrical performance of solution-processed indium oxide (In₂O₃) thin films. Based on thermogravimetric analysis (TGA) of the precursor solution, annealing temperatures of 350, 450, and 550 °C were adopted. The resulting In₂O₃ films were characterized using ultraviolet-visible (UV-Vis) spectroscopy, atomic force microscopy (AFM), Raman spectroscopy, and Hall-effect measurements to evaluate their optical, morphological, crystalline polymorphism, and electrical properties. The results revealed that the film annealed at 450 °C exhibited a field-effect mobility of 4.28 cm²/V·s and an on/off current rat

SUBMITTER: Kim T 

PROVIDER: S-EPMC12566397 | biostudies-literature | 2025 Sep

REPOSITORIES: biostudies-literature