In Situ Optical Monitoring and Morphological Evolution of Si Nanowires Grown on Faceted Al₂O₃(0001) Substrates.

ABSTRACT: This paper presents the growth and in situ optical characterization of silicon nanowires (Si NWs) on Al₂O₃(0001) substrates that are thermally faceted using the atomic low angle shadowing technique (ATLAS) method. Annealing Al₂O₃ substrates in air before surface faceting was used for the first time, as identified by atomic force microscopy (AFM). Planar Si NW arrays were subsequently deposited and characterized in real-time by reflectance anisotropy spectroscopy (RAS). RAS measurements detected irreversible spectral changes during growth, e.g., red-shift in peak energy for marking amorphous Si NW formation. Blue-shifts in RAS spectra following annealing post-growth at varied temperatures were found to be associated with structural nanowire develo

SUBMITTER: Toktarbaiuly O 

PROVIDER: S-EPMC12566479 | biostudies-literature | 2025 Oct

REPOSITORIES: biostudies-literature