Scalable transition metal dichalcogenide memtransistor arrays with Schottky-barrier control for energy-efficient artificial neural networks.

ABSTRACT: Memtransistors that integrate memristor and transistor functionalities are promising candidates for scalable, energy-efficient neuromorphic computing. However, achieving high performance in memtransistor arrays-particularly in terms of resistive switching ratio, uniformity, and scalability-remains a significant challenge for practical deployment in artificial neural networks. Here, we present scalable memtransistor arrays based on transition metal dichalcogenides (TMDCs), where the Schottky barrier is precisely controlled by modulating vacancy distribution and migration behavior. This approach enables a substantial improvement in the resistive switching ratio, reaching 10⁵ through gate modulation. The device-to-device variation is maintained below 6.8%, and the power consumption

SUBMITTER: Hou X 

PROVIDER: S-EPMC12569091 | biostudies-literature | 2025 Oct

REPOSITORIES: biostudies-literature