Unconventional bias-dependent tunneling magnetoresistance in van der Waals ferromagnetic/semiconductor heterojunctions.

ABSTRACT: Two-dimensional van der Waals (vdW) ferromagnetic/semiconductor heterojunctions provide an ideal platform for studying and exploiting tunneling magnetoresistance (TMR) effects, due to the versatile band structure of semiconductors and high quality of their interfaces. In all-vdW magnetic tunnel junction (MTJ) devices, both the magnitude and sign of TMR can be tuned by an applied voltage. Typically, as the bias voltage increases, the amplitude of TMR initially decreases, followed by a reversal and/or oscillation in its sign. Herein, we report on an unconventional bias-dependent TMR observed in all-vdW Fe₃GaTe₂/GaSe/Fe₃GaTe₂ MTJs, where TMR first increases, then decreases, and ultimately undergoes a sign reversal as the bias voltage increases. By c

SUBMITTER: Zhu W 

PROVIDER: S-EPMC12569170 | biostudies-literature | 2025 Oct

REPOSITORIES: biostudies-literature