Interfacial engineering with chemical bath deposition for high-performance HgTe quantum dot-based short-wave infrared photodetectors.

ABSTRACT: Colloidal quantum dot-based short-wave infrared (SWIR) photodetectors are often limited by surface traps and high noise levels at room temperature. In this work, we present a low-temperature chemical bath deposition (CBD) strategy to grow a heterojunction passivation layer on HgTe quantum dot (QD) photoactive layers, enabling high-performance SWIR photodetection at room temperature. The CBD process achieves interfacial modification through a dual mechanism: sulfur ions penetrate the HgTe QD surface to form an Hg-S bonded interfacial region while simultaneously reacting with Cd²⁺ in the bath to create a CdS electron-accepting layer, resulting in a compositionally graded CdS/Hg-S/HgTe structure. The resulting interfacial improvement, coupled with energy level modification, facilit

SUBMITTER: Chen H 

PROVIDER: S-EPMC12572506 | biostudies-literature | 2025 Oct

REPOSITORIES: biostudies-literature