Lateral Semiconductor-Free-Space Gate Transistors.

ABSTRACT: We introduce a novel lateral transistor architecture, the semiconductor-free-space gate transistor (SFGT), in which the conventional solid dielectric is replaced by a semiconductor-free-space gate configuration with sub-100 nm fin channels and dual side gates. This work presents the first demonstration of free-space gating in wide and ultrawide bandgap semiconductors, achieving performance on par with oxide-gated transistors. SFGTs fabricated using β-Ga₂O₃ exhibit subthreshold slopes below 200 mV/dec, high drain current exceeding 250 mA/mm, hysteresis under 230 mV, I_ON/I_OFF ratios above 10⁶, and breakdown voltages over 500 V. The absence of a solid dielectric layer, combined with the open gate geometry, enables direct access to the gat

SUBMITTER: Maciel Garcia GI 

PROVIDER: S-EPMC12576820 | biostudies-literature | 2025 Oct

REPOSITORIES: biostudies-literature