Imaging junctions in two-dimensional semiconductor nanosheet networks.

ABSTRACT: This study explores the challenges associated with translating electrical characteristics of individual two-dimensional semiconductor nanosheets into a network of partially overlapping sheets. Such systems typically suffer from high-energy barriers required to overcome the junctions formed between the adjacent nanosheets, and consequently quench the current passing through the network. We use in-operando Kelvin probe force microscopy to image electrostatic potential profiles during the operation of MoS₂ nanosheet network transistors. Direct imaging of the potential drops allows us to distinguish contributions from individual nanosheets and those from junctions, correlated by the junction-related potential drops with the network morphology. A diagram-based model is develop

SUBMITTER: Pesic J 

PROVIDER: S-EPMC12578641 | biostudies-literature | 2025

REPOSITORIES: biostudies-literature