A Cost-Effective Reference-Less Semiconductor Ion Sensor with Anodic Aluminum Oxide Film.

ABSTRACT: The detection and monitoring of ions are essential for a broad range of applications, including industrial process control and biomedical diagnostics. Traditional ion-sensitive field-effect transistors require bulky and expensive reference electrodes, which face several limitations, including device miniaturization, high fabrication costs, and incompatibility with semiconductor manufacturing processes. Here, we introduce a reference-less semiconductor ion sensor (RELESIS) that utilizes anodic aluminum oxide film as both the sensitive and dielectric layer. The RELESIS is composed of a metal-oxide-semiconductor field-effect transistor and an interdigital electrode, which fundamentally eliminates the need for a reference electrode, thereby enabling device miniaturization. During fabrication,

SUBMITTER: Zhong Y 

PROVIDER: S-EPMC12609522 | biostudies-literature | 2025 Nov

REPOSITORIES: biostudies-literature