Simulation Study on the Effect of Growth Pressure on Growth Rate of GaN.

ABSTRACT: During the preparation of gallium nitride (GaN) single crystals by Hydride Vapor Phase Epitaxy (HVPE), variations in growth pressure within the reaction chamber can easily lead to a mismatch between vapor transport dynamics and surface reaction processes, thereby affecting crystal growth rate and uniformity. To address this issue, this study established a multi-physics coupled simulation model based on the HVPE equipment structure. By integrating reaction gas flow, heat transfer, chemical reactions, and mass transport mechanisms, systematic finite element analysis was employed to simulate the flow field distribution, thermal field stability, and precursor concentration field evolution within the reaction chamber under different growth pressures (91-141 kPa). The simulation results indicate

SUBMITTER: Qin T 

PROVIDER: S-EPMC12610050 | biostudies-literature | 2025 Oct

REPOSITORIES: biostudies-literature