Controlling the Wake-Up Mechanism and Switching Kinetics of Ferroelectric Hf_<i>x</i>Zr_{1 - <i>x</i>}O₂ through Hf Content Modulation.

ABSTRACT: The excellent scalability and compatibility to current CMOS manufacturing processes make ferroelectric Hf_xZr_{1 - x}O₂ thin films a promising candidate for embedded nonvolatile memories, as well as for synaptic devices in neuro-inspired computing. In order to achieve precise control over the polarization states and to ensure reliable operation in these thin films, a thorough understanding of the film's domain switching kinetics and behavior under field cycling is necessary. The Hf composition in Hf_xZr_1 - xO₂ thin films plays a crucial role in determining the disorders, phase composition, and crystallographic texture within the film when integrated in a metal-ferroelectric-metal (MFM) devic

SUBMITTER: Sunil A 

PROVIDER: S-EPMC12616602 | biostudies-literature | 2025 Nov

REPOSITORIES: biostudies-literature