Proximity-Induced Ferroelectric Switching in Wurtzite/Fluorite Bilayers for High-Performance Ferroelectric Field-Effect Transistor.

ABSTRACT: Proximity ferroelectricity, wherein polarization switching in one ferroelectric layer with a lower energy barrier can trigger switching in an adjacent ferroelectric with a higher energy barrier, has been demonstrated only in bilayers composed of structurally similar wurtzite-structured materials. This work demonstrates proximity-induced ferroelectric switching across a heterostructure composed of crystallographically and functionally dissimilar materials, wurtzite-structured AlScN and fluorite-structured HfZrO₂. The AlScN/HfZrO₂ and AlN/HfZrO₂ bilayers exhibit cooperative switching dynamics despite their contrasting symmetry and polarization behaviors. This interfacial coupling produces a unique ferroelectric response, characterized by low remanent polariza

SUBMITTER: Kim KD 

PROVIDER: S-EPMC12617061 | biostudies-literature | 2025 Nov

REPOSITORIES: biostudies-literature