Unusual Van der Waals Magnetoresistance in Stacked Ferromagnetic Fe₃GeTe₂: The Role of Atomically Sharp Interfaces.

ABSTRACT: Interfaces can significantly influence the physical properties of systems, especially in 2D van der Waals (vdW) magnets, where atomically sharp interfaces (ASI) are intrinsic. However, the role of the ASI fields on magnetoresistance (MR) in vdW magnetic layers has largely been overlooked. Here, we investigate the angular dependence of MR in stacked ferromagnetic Fe₃GeTe₂ (FGT). Remarkably, the MR exhibits similar universal behaviors associated with unusual anisotropic magnetoresistance (UAMR), which has been widely observed in almost all magnet/non-magnet bilayers at the nanometer scale, featuring distinct characteristics. Unlike the exponential decay of UAMR with thickness in nanometer-thick bilayers, the UAMR of stacked FGT layers remains insensitive to thickness. T

SUBMITTER: Chen Q 

PROVIDER: S-EPMC12622409 | biostudies-literature | 2025 Nov

REPOSITORIES: biostudies-literature