Zirconium-Rich Strategy in Ultrathin Hf_0.5Zr_0.5O₂ toward Back-End-of-Line-Compatible Ferroelectric Random Access Memory.

ABSTRACT: HfO₂-based ferroelectric devices have garnered lots of attention in embedded memory due to its exceptional complementary metal oxide semiconductor (CMOS) compatibility as well as sub-10 nm scalability. Nevertheless, challenges such as double remanent polarization (2P_r) degradation and thermal budget issues while scaling the Hf_0.5Zr_0.5O₂ (HZO) thickness have limited its integration in high-intensity memory and high-speed computing. Here, an effective strategy involving the zirconium-rich layer (Zr-RL) is developed to address this dilemma. Remarkably low operating voltage of 1.0 V, alongside exceptional ferroelectricity with 2P_r of 43.4 µC cm^-2 and a coercive voltage of 0.75 V are achieved in the ferroelectric capac

SUBMITTER: Liu Y 

PROVIDER: S-EPMC12622460 | biostudies-literature | 2025 Nov

REPOSITORIES: biostudies-literature