ALD-grown semimetallic TiS _<i>x</i> for hole injection into monolayer WSe₂.

ABSTRACT: Semimetal contacts have recently emerged as promising due to the remarkably low contact resistance of Bi and Sb to n-channel field effect transistors (FETs) prepared from two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductors. However, hole injection in 2D semiconductors remains a bottleneck, hindering application of 2D devices in advanced logic nodes. In this study, we investigate the use of atomic layer deposition (ALD) to fabricate high work function semimetallic TiS _x interlayers for efficient hole injection into WSe₂, a 2D semiconductor of considerable interest due to its potential for next-generation scaled electronics. By employing ALD-grown semimetallic TiS _x combined with capping the device with MoO _x

SUBMITTER: Rahman MS 

PROVIDER: S-EPMC12628730 | biostudies-literature | 2025 Nov

REPOSITORIES: biostudies-literature