Heterogeneous integration of ultrawide bandgap semiconductors for radio frequency power devices.

ABSTRACT: Ultrawide bandgap (UWBG) semiconductors offer high critical electric fields and saturation velocities ideal for radio frequency (rf) devices, but achieving both shallow-level doping and high thermal conductivity (k_T) in a single material remains difficult. We demonstrate a scalable, exfoliation-based layer-transfer process to heterogeneously integrate gallium oxide (Ga₂O₃) thin films with shallow dopants onto high-k_T aluminum nitride (AlN) substrates. This method obviates ion implantation and interfacial dielectric layers used in conventional approaches. A large conduction band offset (3.4 electron volts) at the Ga₂O₃/AlN interface improves electron confinement in the Ga₂O₃ channel. T-gate

SUBMITTER: Zhou H 

PROVIDER: S-EPMC12629194 | biostudies-literature | 2025 Nov

REPOSITORIES: biostudies-literature