Homoepitaxial growth of isotopically enriched h¹⁰BN layers on h¹¹BN crystals by high-temperature molecular beam epitaxy.

ABSTRACT: Isotope-enriched bulk hexagonal boron nitride (hBN) crystals have enhanced properties that improve the performance of nanophotonic and quantum technologies. Developing methods to deposit epitaxial layers on such crystals enables the exciting prospects of producing isotope-engineered hBN layers and heterostructures. Here, we demonstrate the homoepitaxial growth of hBN with phase-separated ¹⁰B and ¹¹B isotopes by high-temperature molecular beam epitaxy (HT-MBE). Controlled nucleation, improved surface uniformity, and step-flow growth of an h¹⁰BN epilayer were achieved by etching the h¹¹BN bulk crystals with molecular hydrogen. The alignment of the h¹⁰BN epilayer and host h¹¹BN lattices was confirmed by lattice-resolved atomic

SUBMITTER: Bradford J 

PROVIDER: S-EPMC12629975 | biostudies-literature | 2025

REPOSITORIES: biostudies-literature