Hole migration enables efficient and ultra-bright green quantum dot LEDs.

ABSTRACT: Quantum dots are promising candidates for more efficient and brighter light-emitting diodes in display and lighting applications. However, due to low carrier concentrations and strong confinement, the electroluminescence efficiency and brightness are hindered by low exciton formation rate, i.e. the probability of electrons meeting holes. Here, we demonstrate that the weak hole confinement, induced inter-dot hole diffusion in quantum dots with large CdZnSe cores and thin ZnS shells, allows more efficient exciton formation. As a result, we achieve a peak external quantum efficiency of 30.7%, a maximum luminance exceeding 1.9 million cd m-2 in green quantum dot light-emitting diodes. Moreover, efficient utilization of carriers depresses the Joule heat generation, allowing us to achieve a T95

SUBMITTER: Zhang H 

PROVIDER: S-EPMC12630625 | biostudies-literature | 2025 Nov

REPOSITORIES: biostudies-literature