Monolithically-Integrated van der Waals Synaptic Memory via Bulk Nano-Crystallization.

ABSTRACT: Owing to the evolution of data-driven technologies, including the large language models, generative artificial intelligence, autonomous driving, and the internet of things requires advanced memory technology. However, conventional memory device structures and fabrication process have significant limitations for high-density integration. Herein, this study reports the monolithically-integrated 1-selector and 1-resistive (1S1R) synaptic memory in van der Waals (vdW) heterostructure, which overcomes the conventional limitations of device integration technologies. Single-step direct synthesis of vdW heterostructure and its corresponding 1S1R cell is fabricated via plasma-enhanced lattice-distortion. Scanning-transmission electron microscopy, and X-ray photoelectron spectroscopy are correlative

SUBMITTER: Lee J 

PROVIDER: S-EPMC12631876 | biostudies-literature | 2025 Nov

REPOSITORIES: biostudies-literature