MXene alloy-based metal-semiconductor contact for low-resistive field-effect transistors.

ABSTRACT: MXenes offer a unique platform for designing high-performance electronic devices due to their diverse properties and chemical tunability. This study focuses on engineering low-resistance metal-semiconductor contacts using MXenes for future field-effect transistor applications. Through a comprehensive approach combining first-principles calculations, transport simulations, and alloy phase engineering, we demonstrate the feasibility of achieving low-resistance contacts with high current-carrying capacity. Through first-principles calculations, we identify promising MXene heterojunctions based on lattice matching and Schottky barrier height. Notably, the Ta₂CO₂-Ti₂CO₂ contact exhibits a remarkably low Schottky barrier height. Using non-equilibrium G

SUBMITTER: Bera S 

PROVIDER: S-EPMC12644695 | biostudies-literature | 2025 Nov

REPOSITORIES: biostudies-literature