Overcoming Material Incompatibility via 2D Free-Surface Engineering.
Ontology highlight
ABSTRACT: Heteroepitaxy has been pivotal in advancing both optoelectronics and microelectronics, driving the development of faster, more efficient devices across diverse applications. However, achieving high material quality remains challenging due to lattice mismatches. Strain induced by variations in lattice parameters and thermal properties provides additional degrees of freedom for material tailoring but often leads to dislocation generation, wafer bowing, and cracking. These issues are addressed through a scalable post-epitaxial approach that strategically targets the misfit dislocation network, leading to the creation of a sub-nanometric 2D free surface (2DFS). This interface effectively decouples the epilayer from the substrate, significantly reducing strain-related defects. Scalable heterost
SUBMITTER: Bioud YA
PROVIDER: S-EPMC12651136 | biostudies-literature | 2025 Nov
REPOSITORIES: biostudies-literature
ACCESS DATA