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Flexible Inorganic/Organic Memristor Based on W-Doped MoO<sub>x</sub>/Poly(methyl methacrylate) Heterostructure.


ABSTRACT: Work investigates the doping of molybdenum oxide (MoOx) with tungsten (W). The successful incorporation of W into the MoOx lattice was confirmed through X-ray photoelectron spectroscopy (XPS) and energy-dispersive X-ray spectroscopy (EDS). Structural and optical analysis revealed the presence of oxygen vacancies within the W-MoOx film, which are known to facilitate resistive switching (RS) in memristive devices. Based on this, a flexible memristor with the structure PET/ITO/W-MoOx/polymethyl methacrylate (PMMA)/Al was fabricated. PMMA was strategically introduced between the W-MoOx layer and the aluminum electrode to modulate interfacial properties that influence RS behavior. The W-MoOx/PMMA-based memristor exhibited good re

SUBMITTER: Kalemai G 

PROVIDER: S-EPMC12655515 | biostudies-literature | 2025 Nov

REPOSITORIES: biostudies-literature