Exploiting strained epitaxial germanium for scaling low-noise spin qubits at the micrometre scale.

ABSTRACT: Disorder in the heterogeneous material stack of semiconductor spin qubit systems introduces noise that compromises quantum information processing, posing a challenge to coherently control large-scale quantum devices. Here we exploit low-disorder epitaxial, strained quantum wells in Ge/SiGe heterostructures grown on Ge wafers to comprehensively probe the noise properties of complex micrometre-scale devices, comprising quantum dots arranged in a two-dimensional array. We demonstrate an average low charge noise across different locations on the wafer, providing a benchmark for quantum confined holes. We then establish spin qubit control and extend our investigation from electrical to magnetic noise through spin echo measurements. Exploiting dynamical decoupling sequences, we quantify the powe

SUBMITTER: Stehouwer LEA 

PROVIDER: S-EPMC12657214 | biostudies-literature | 2025 Dec

REPOSITORIES: biostudies-literature