ABSTRACT: Silver halides (AgX, X = Cl, Br, I) are promising materials for various applications, including optical, medical, and electronic technologies, due to their light sensitivity, high refractive index, and antiseptic properties. Silver halides are also important constituents of Pb-free photovoltaic materials such as rudorffites and double halide perovskites. This study presents atomic layer deposition (ALD) processes for the deposition of silver halide thin films using (2,2-dimethyl-6,6,7,7,8,8,8-heptafluorooctane-3,5-dionato)-silver-(I)-triethylphosphine (Ag-(fod)-(PEt3)) as the silver precursor and different halide precursors, including TiX4, SnX4, GaX3, and HX (X = Cl, Br, I). The films were deposited on Si substrate at temperatures ranging from 1
