Pattern Fidelity of Vertically Aligned GaAs Nanowire Arrays.

ABSTRACT: Bottom-up grown III-V semiconductor nanowire (NW) device components are promising structures for advanced functional electrical and optoelectronic applications, including solar energy conversion devices such as photoelectrochemical cells. The work presents a strategy for preparing highly ordered GaAs NW arrays by combining a low-cost, non-lithographic nanostructuring technique with state-of-the-art bottom-up NW growth via metal-organic vapor phase epitaxy (MOVPE). Regular gold (Au) nanodisk arrays are patterned using an ultrathin anodic alumina membrane mask and serve as catalysts for uniform NW array formation. In contrast to conventional methods such as the expansive, resin-based nanoimprint lithography, the specific fabrication process of the Au nanodisks prevents undesired substrate im

SUBMITTER: Koch J 

PROVIDER: S-EPMC12658925 | biostudies-literature | 2025 Nov

REPOSITORIES: biostudies-literature