Electron-Beam Excited Conductive Atomic Force Microscopy for Back Contact Free, Wafer-Scale and In-Line Compatible Electrical Characterization of 2D Materials.

ABSTRACT: Electrical atomic force microscopies (AFMs) have emerged as leading metrology techniques for evaluating the quality of 2D materials. Their advantages include high-resolution electrical mapping, non-destructive measurement, and the ability to probe nanoscale defects and transport properties. Conductive AFM (C-AFM) has been particularly instrumental, enabling the direct observation of individual vacancies and vacancy clusters, voids, wrinkles, and cracks. Despite this incredible versatility, C-AFM remains a two-probes method, thus it is limited by the need for physical back-contact. Creating this back contact is complex and time-consuming. More importantly, this requirement prevents C-AFM from being a viable in-line metrology technique. Here, it is demonstrated that a low-energy e-beam impin

SUBMITTER: Laskar MAR 

PROVIDER: S-EPMC12667532 | biostudies-literature | 2025 Nov

REPOSITORIES: biostudies-literature