Electron transport through nanoscale multilayer graphene and hexagonal boron nitride junctions.

ABSTRACT: In this study, we employ the non-equilibrium Green's function (NEGF) method combined with density functional theory (DFT) to compare electron transport through several layers of nanoscale graphene and hexagonal boron nitride (h-BN). Calculations were performed for one to six layers, corresponding to thicknesses of 0.5-3.0 nm, respectively. Electron transport was computed perpendicular to the layers in the stacking direction. We compared the decay of the current with the number of layers and evaluated the ability of h-BN to filter currents as a material coating. To investigate the effect of disorder, we included two major defects in the graphene lattice, namely, nitrogen doping and Stone-Wales defects. Nitrogen doping transforms graphene from a zero-bandgap semiconductor to a metal, while S

SUBMITTER: Staykov A 

PROVIDER: S-EPMC12667729 | biostudies-literature | 2025

REPOSITORIES: biostudies-literature